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ADN2850BRUZ25 Datasheet(PDF) 4 Page - Analog Devices

Part No. ADN2850BRUZ25
Description  Nonvolatile Memory, Dual 1024-Position Digital Resistor
Download  28 Pages
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Maker  AD [Analog Devices]
Homepage  http://www.analog.com
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ADN2850BRUZ25 Datasheet(HTML) 4 Page - Analog Devices

 
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ADN2850
Data Sheet
Rev. E | Page 4 of 28
Parameter
Symbol
Conditions
Min
Typ 1
Max
Unit
CURRENT MONITOR TERMINALS
Current Sink at V1
I1
0.0001
10
mA
Current Sink at V2
I2
0.0001
10
mA
DYNAMIC CHARACTERISTICS3, 7
Resistor Noise Density
eN_WB
Code= full scale
RWB = 25 kΩ/250 kΩ, TA = 25°C
20/64
nV/√Hz
Analog Crosstalk
CT
VBX = GND, Measured VW1 with VW2 =
1 VRMS, f = 1 kHz, Code 1 = midscale,
Code 2 = midscale,
RWB = 25 kΩ/250 kΩ
−95/−80
dB
1
Typicals represent average readings at 25°C and VDD = 5 V.
2
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. The maximum current in each code is defined by IWB = (VDD− 1)/RWB.
(see Figure 20).
3
Guaranteed by design and not subject to production test.
4
Common-mode leakage current is a measure of the dc leakage from any Terminal B, or Terminal W to a common-mode bias level of VDD/2.
5
EEMEM restore mode current is not continuous. Current is consumed while EEMEM locations are read and transferred to the RDAC register.
6
PDISS is calculated from (IDD × VDD) + (ISS × VSS).
7
All dynamic characteristics use VDD = +2.5 V and VSS = −2.5 V.


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