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TIL111 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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TIL111 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 14 page  6/30/03 Page 3 of 14 © 2003 Fairchild Semiconductor Corporation GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS TIL111 TIL111-M TIL117-M MOC8100-M Note * Typical values at TA = 25°C unless otherwise noted ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Device Symbol Min Typ* Max Unit EMITTER Input Forward Voltage (IF = 16 mA) (TA = 25°C) TIL111/TIL111-M VF 1.2 1.4 V (IF = 10 mA; for MOC8100-M) (IF = 16 mA; for TIL117-M) (TA = 0-70°C) MOC8100-M/ TIL117-M 1.2 1.4 (TA = -55°C) 1.32 (TA = +100°C) 1.10 Reverse Leakage Current (VR = 3.0 V) TIL111/TIL111-M/ TIL117-M IR 0.001 10 µA (VR = 6.0V) MOC8100-M 0.001 10 µA DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) All BVCEO 30 100 V Collector-Base Breakdown Voltage (IC = 10 µA, IF = 0) All BVCBO 70 120 V Emitter-Base Breakdown Voltage (IE = 10 µA, IF = 0) All BVEBO 710 V Emitter-Collector Breakdown Voltage (IF = 100µA, IF = 0) TIL111-M TIL117-M BVECO 710 V Collector-Emitter Dark Current (VCE = 10 V, IF = 0) TIL111/TIL111-M/ TIL117-M ICEO 1 50 nA (VCE = 5V, TA = 25°C) MOC8100-M ICEO 0.5 25 nA (VCE = 30 V, IF = 0, TA = 70°C) TIL117-M/ MOC8100-M ICEO 0.2 50 µA Collector-Base Dark Current (VCB = 10 V) TIL111/TIL111-M/ TIL117-M ICBO 20 nA (VCB = 5 V) MOC8100-M ICBO 10 nA Capacitance (VCE = 0 V, f = 1 MHz) All CCE 8pF ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ* Max Units Input-Output Isolation Voltage (Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min) VISO 5300 Vac(rms) (‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk) Isolation Resistance (VI-O = 500 VDC) RISO 1011 Ω Isolation Capacitance (VI-O = 0, f = 1 MHz) CISO 2pF |
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