1

LTC1693

DESCRIPTIO

FEATURES

APPLICATIO S

High Speed Single/Dual

N-Channel MOSFET Drivers

s

Dual MOSFET Drivers in SO-8 Package

or Single MOSFET Driver in MSOP Package

s

1G

Ω Electrical Isolation Between the Dual Drivers

Permits High/Low Side Gate Drive

s

1.5A Peak Output Current

s

s

s

CMOS Compatible Inputs with Hysteresis,

s

s

Undervoltage Lockout

s

Thermal Shutdown

The LTC

at high speed. The 1.5A peak output current reduces

switching losses in MOSFETs with high gate capacitance.

The LTC1693-1 contains two noninverting drivers while

the LTC1693-2 contains one noninverting and one invert-

ing driver. These dual drivers are electrically isolated and

independent. The LTC1693-3 is a single driver with an

output polarity select pin.

thresholds with 1.2V of typical hysteresis. They can level-

drive for the external MOSFET.

The LTC1693 contains an undervoltage lockout circuit and

a thermal shutdown circuit that disable the external

N-channel MOSFET gate drive when activated.

The LTC1693-1 and LTC1693-2 come in an 8-lead SO pack-

age. The LTC1693-3 comes in an 8-lead MSOP package.

s

Power Supplies

s

High/Low Side Drivers

s

Motor/Relay Control

s

Line Drivers

s

Charge Pumps

Two Transistor Forward Converter

, LTC and LT are registered trademarks of Linear Technology Corporation.

BOOST

TG

TS

BG

PHASE

RUN/SHDN

20

19

18

R6 100

Ω

R7 100

Ω

11

BAT54

12

16

14

13

R8

301k

1%

R2

5.1

Ω

R10

10k

1%

9

8

C15

0.1

µF

C14

3300pF

C11

0.1

µF

C12

100pF

C7

1

µF

C8

1

µF

C3

4700pF

25V

C4

0.1

µF

L1

1.5

µH

T1

13:2

1.5V/15A

RETURN

1693 TA01

C13

1

µF

C1: SANYO 63MV330GX

C2: WIMA SMD4036/1.5/63/20/TR

C6: KEMET T510X477M006AS (

×8)

L1: GOWANDA 50-318

T1: GOWANDA 50-319

C5

1

µF

C10

0.1

µF

C9

1800pF

5%

NPO

R9

12k

R5

2.49k

1%

15

17

2

1

12V

RETURN

48VDC

±10%

4

3

5

6

7

10

SYNC

SL/ADJ

SS

PGND

SGND

LT1339

LTC1693CS8-2

D2

MURS120

IN1

GND1

IN2

GND2

8

7

6

5

1

2

3

4

OUT1

OUT2

LTC1693CS8-2

IN1

GND1

IN2

GND2

8

7

6

5

1

2

3

4

OUT1

OUT2

D4

MBRO530T1

D3

MURS120

Q1

MTD20NO6HD

D1

MURS120

C2

1.5

µF

63V

C1

330

µF

63V

Q3

MTD20NO6HD

Q4

Si4420

R1

0.068

Ω

+

Q2

Si4420

×2

C6

470

µF

6.3V

×8

+

R3

249

Ω

1%

R4

1.24k

1%

••