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SSD2007A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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SSD2007A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  Electrical Characteristics (T A=25℃ unless otherwise specified) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic Symbol Max. Units Typ. Min. Test Condition Static Drain-Source On-State Resistance(2) Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge g fs t d(on) t r t d(off) t f Q g Q gs Q gd BV DSS V GS(th) R DS(on) I GSS I DSS V V μA μA μA Ω S ns nC -- -- -- -- -- -- -- -- V GS=0V,ID=250μA V DS= VGS ,ID=250μA V GS=20V V GS=-20V V DS=50V V DS=40V,TJ=55℃ V GS=10V,ID=1.5A V GS=5.0V,ID=0.6A V DS ≥15V,ID=2.0A V DD=30V,ID=0.6A, Z 0=6.0Ω, V DS=25V,VGS=10V, I D=1.3A Drain-to-Source Leakage Current Source-Drain Diode Ratings and Characteristics Continuous Source Current (Body Diode) Diode Forward Voltage(2) Reverse Recovery Time I S Characteristic Symbol Max. Units Typ. Min. Test Condition -- -- -- -- -- A V ns Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier I DON On-State Drain-Source Current(2) AV GS=10V,VDS=5V V SD t rr T J=25℃,IS=1.25A,VGS=0V T J=25℃,IF=2.5A,diF/dt=100A/μs ─ ─ ─ ─ ─ ─ ─ ─ │ │ │ │ │ │ │ │ │ │ │ │ ┘ ┘ ┘ ┘ │ │ │ │ ─ ─ ─ ─ 600 2.0 -- -- -- -- 8.0 -- -- -- -- -- -- -- -- 4.0 1.0 -1.0 2 25 -- 0.3 0.5 -- 40 70 100 70 15 -- -- 2.5 -- -- -- -- -- 1.0 2.0 -- -- -- -- -- 1.8 1.2 100 Thermal Resistance Junction-to-Ambient RθJA ℃/W Characteristic Max. Units Symbol Typ. Notes ; (1) T J= 25℃ to 150℃ (2) Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% -- 62.5 ▲ ◀ ○ ○ ○ D S G │ │ │ │ │ │ │ │ │ │ │ │─ ─ ─ ─ │ │ │ │ ─ ─ ─ ─ Dual N-CHANNEL POWER MOSFET SSD2007A |
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