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TPS62354YZGT Datasheet(PDF) 3 Page - Texas Instruments |
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TPS62354YZGT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 46 page  RECOMMENDED OPERATING CONDITIONS DISSIPATION RATINGS (1) ELECTRICAL CHARACTERISTICS TPS62350, TPS62351 TPS62352, TPS62353 TPS62354, TPS62355, TPS62356 www.ti.com .............................................................................................................................................................. SLVS540E – MAY 2006 – REVISED APRIL 2008 over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VI Input voltage range 2.7 5.5 V TA Operating temperature range(1) -40 85 °C TJ Operating virtual junction temperature range -40 125 °C (1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application ( θ JA), as given by the following equation: TA(max)= TJ(max)–(θJA X PD(max)). POWER RATING DERATING FACTOR PACKAGE RθJA (2) FOR TA ≤ 25°C ABOVE TA = 25°C DRC 49 °C/W 2050 mW 21 mW/ °C YZG 89 °C/W 1100 mW 12 mW/ °C (1) Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = [TJ(max) – TA] / θJA. (2) This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard). over operating free-air temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply with VI = 3.6 V, EN = VI, VSEL = VI, SYNC = GND, VSEL0[6] bit = 1. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT TPS62350/1/2/3/4/5 110 150 IO = 0 mA, Fast PFM mode enabled µA Device not switching TPS62356 117 160 Operating quiescent IQ TPS62350/1/2/3/4/5 28 45 IO = 0 mA, Light PFM mode enabled current µA Device not switching TPS62356 35 52 TPS62350/1/2/3/4/5/6 IO = 0 mA, 3-MHz PWM mode operation 4.8 mA EN = GND, EN_DCDC bit = X 0.1 2 µA I(SD) Shutdown current EN = VI, EN_DCDC bit = 0 6.5 µA V(UVLO) Undervoltage lockout threshold 2.20 2.3 V ENABLE, VSEL, SDA, SCL, SYNC VIH High-level input voltage 1.2 V VIL Low-level input voltage 0.4 V Ilkg Input leakage current Input tied to GND or VI 0.01 1 µA POWER SWITCH VI = V(GS) = 3.6 V, YZG package 250 500 TPS62350/1/2/3/4/5 VI = V(GS) = 3.6 V, DRC package 275 500 P-channel MOSFET on rDS(on) m Ω resistance VI = V(GS) = 2.7 V, DRC package 350 750 TPS62356 VI = V(GS) = 3.2 V, YZG package 320 500 Ilkg P-channel leakage current V(DS) = 6 V 1 µA VI = V(GS) = 3.6 V, YZG package 150 350 N-channel MOSFET on rDS(on) TPS62350/1/2/3/4/5/6 VI = V(GS) = 3.6 V, DRC package 165 350 m Ω resistance VI = V(GS) = 2.7 V, YZG / DRC package 210 500 Ilkg N-channel leakage current V(DS) = 6 V 1 µA R(DIS) Discharge resistor for power-down sequence 15 50 Ω TPS62350/1/2/3/4/5 1150 1350 1600 mA P-MOS current limit 2.7 V ≤ VI ≤ 5.5 V TPS62356 1300 1550 1800 mA Copyright © 2006–2008, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS62350, TPS62351 TPS62352, TPS62353 TPS62354, TPS62355, TPS62356 |
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