OUT

GND

V

IN+

V+

V

IN-

1

2

3

5

4

Pinout#1

OUT

GND

V+

V

IN-

V

IN+

1

2

3

5

4

Pinout#2

INA193, INA194

INA195, INA196

INA197, INA198

SBOS307F – MAY 2004 – REVISED FEBRUARY 2010

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PRODUCT

PACKAGE-LEAD

PACKAGE DESIGNATOR

PACKAGE MARKING

INA193

SOT23-5

DBV

BJJ

INA194

SOT23-5

DBV

BJI

INA195

SOT23-5

DBV

BJK

INA196

SOT23-5

DBV

BJE

INA197

SOT23-5

DBV

BJH

INA198

SOT23-5

DBV

BJL

(1)

For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

INA19x

UNIT

Supply Voltage

+18

V

–18 to +18

V

–16 to +80

V

GND – 0.3 to (V+) + 0.3

V

5

mA

Operating Temperature

–55 to +150

°C

Storage Temperature

–65 to +150

°C

Junction Temperature

+150

°C

Human Body Model (HBM)

4000

V

ESD Ratings

Charged-Device Model (CDM)

1000

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not supported.

(2)

Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.

PIN ASSIGNMENTS

DBV PACKAGE

DBV PACKAGE

INA193, INA194, INA195

INA196, INA197, INA198

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