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PMLL4148L115 Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMLL4148L115 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page PMLL4148L_PMLL4448 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 8 — 1 February 2011 5 of 11 NXP Semiconductors PMLL4148L; PMLL4448 High-speed switching diodes 8. Test information f=1MHz; Tj =25 °C Fig 5. Diode capacitance as a function of reverse voltage; typical values 010 20 1.2 1.0 0.6 0.4 0.8 mgd004 VR (V) Cd (pF) (1) IR =1mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ≤ 0.05 Oscilloscope: rise time tr =0.35ns Fig 6. Reverse recovery time test circuit and waveforms Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ≤ 0.005 Fig 7. Forward recovery voltage test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 tr t tp 10 % 90 % I input signal RS = 50 Ω I Ri = 50 Ω OSCILLOSCOPE 1 k Ω 450 Ω D.U.T. mga882 VFR t output signal V |
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