©2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6

2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Note:

1. Parameters meet or exceed JEDEC registered data (for 4N38M only).

Symbol

Parameter

Device

Value

Units

TOTAL DEVICE

Storage Temperature

All

-40 to +150

°C

Operating Temperature

All

-40 to +100

°C

Lead Solder Temperature (Wave Solder)

All

260 for 10 sec

°C

Derate Above 25°C

All

260

mW

3.5

mW/°C

EMITTER

All

80

mA

All

6.0

V

All

3.0

A

(1)

Derate Above 25°C

All

150

mW

1.41

mW/°C

DETECTOR

All

300

mW

Derate linearly above 25°C

4.0

mW/°C

MOC8204M

400

V

H11D1M, H11D2M

300

H11D3M

200

4N38M

80

MOC8204M

400

V

H11D1M, H11D2M

300

H11D3M

200

4N38M

80

H11D1M, H11D2M,

H11D3M,

MOC8204M

7V

Collector Current (Continuous)

All

100

mA