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IRF8721PBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF8721PBF
Description  Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF8721PBF Datasheet(HTML) 1 Page - International Rectifier

  IRF8721PBF Datasheet HTML 1Page - International Rectifier IRF8721PBF Datasheet HTML 2Page - International Rectifier IRF8721PBF Datasheet HTML 3Page - International Rectifier IRF8721PBF Datasheet HTML 4Page - International Rectifier IRF8721PBF Datasheet HTML 5Page - International Rectifier IRF8721PBF Datasheet HTML 6Page - International Rectifier IRF8721PBF Datasheet HTML 7Page - International Rectifier IRF8721PBF Datasheet HTML 8Page - International Rectifier IRF8721PBF Datasheet HTML 9Page - International Rectifier  
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www.irf.com
1
07/30/07
IRF8721PbF
HEXFET® Power MOSFET
Notes
 through … are on page 9
Benefits
l Very Low Gate Charge
l Low RDS(on) at 4.5V VGS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
PD - 97119
Description
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
W
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
g
–––
20
°C/W
RθJA
Junction-to-Ambient
fg
–––
50
-55 to + 150
2.5
0.02
1.6
Max.
14
11
110
± 20
30
VDSS
RDS(on) max
Qg
30V 8.5m
:@VGS = 10V 8.3nC


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