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IRF8721PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF8721PBF
Description  Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF8721PBF Datasheet(HTML) 2 Page - International Rectifier

  IRF8721PBF Datasheet HTML 1Page - International Rectifier IRF8721PBF Datasheet HTML 2Page - International Rectifier IRF8721PBF Datasheet HTML 3Page - International Rectifier IRF8721PBF Datasheet HTML 4Page - International Rectifier IRF8721PBF Datasheet HTML 5Page - International Rectifier IRF8721PBF Datasheet HTML 6Page - International Rectifier IRF8721PBF Datasheet HTML 7Page - International Rectifier IRF8721PBF Datasheet HTML 8Page - International Rectifier IRF8721PBF Datasheet HTML 9Page - International Rectifier  
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IRF8721PbF
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.021
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
6.9
8.5
m
Ω
–––
10.6
12.5
VGS(th)
Gate Threshold Voltage
1.35
–––
2.35
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-6.2
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
27
–––
–––
S
Qg
Total Gate Charge
–––
8.3
12
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.0
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.0
–––
nC
Qgd
Gate-to-Drain Charge
–––
3.2
–––
Qgodr
Gate Charge Overdrive
–––
2.0
–––
See Fig. 16a and 16b
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.2
–––
Qoss
Output Charge
–––
5.0
–––
nC
RG
Gate Resistance
–––
1.8
3.0
Ω
td(on)
Turn-On Delay Time
–––
8.2
–––
tr
Rise Time
–––
11
–––
td(off)
Turn-Off Delay Time
–––
8.1
–––
ns
tf
Fall Time
–––
7.0
–––
Ciss
Input Capacitance
–––
1040
–––
Coss
Output Capacitance
–––
229
–––
pF
Crss
Reverse Transfer Capacitance
–––
114
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
3.1
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
112
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
14
21
ns
Qrr
Reverse Recovery Charge
–––
15
23
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
See Fig. 15a
Max.
68
11
ƒ = 1.0MHz
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A e
MOSFET symbol
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 11A
VDS = 15V
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
TJ = 25°C, IF = 11A, VDD = 15V
di/dt = 300A/μs
e
TJ = 25°C, IS = 11A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 11A e
VGS = 4.5V
Typ.
–––
VDS = VGS, ID = 25μA
RG = 1.8Ω
VDS = 15V, ID = 11A
VDS = 24V, VGS = 0V, TJ = 125°C
–––
ID = 11A
VGS = 0V
VDS = 15V


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