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IR2304SPbF Datasheet(PDF) 1 Page - International Rectifier |
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IR2304SPbF Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page Data Sheet No. PD60200 revB Features • Floating channel designed for bootstrap operation to +600V. Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Under voltage lockout for both channels • 3.3V, 5V, and 15V input logic input compatible • Cross-conduction prevention logic • Matched propagation delay for both channels • Lower di/dt gate driver for better noise immunity • Internal 100ns dead-time • Output in phase with input HALF-BRIDGE DRIVER Product Summary VOFFSET 600V max. IO+/- (min) 60 mA/130 mA VOUT 10 - 20V Delay Matching 50 ns Internal deadtime 100 ns ton/off (typ.) 220/220 ns IR2304(S) & (PbF) www.irf.com 1 LIN HIN VCC COM VB HO VS LO Vcc HIN LIN up to 600V TO LOAD IR2304 Block Diagram Package 8 Lead SOIC 8-Lead PDIP Part Input logic Cross- conduction prevention logic Dead-Time Ground Pins 2106/2301 COM 21064 HIN/LIN no none VSS/COM 2108 Internal 540ns COM 21084 HIN/LIN yes Programmable 0.54~5 µs VSS/COM 2109/2302 Internal 540ns COM 21094 IN/SD yes Programmable 0.54~5 µs VSS/COM 2304 HIN/LIN yes Internal 100ns COM 2106/2301/2108/2109/2302/2304 Feature Comparison • Available in Lead-Free Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with inde- pendent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse cur- rent buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. |
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