Si4874DY Rev.A

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Thermal Characteristics

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1

2

R

(t) = r(t) * R

R

= 125°C/W

θJA

θJA

θJA

T - T

= P * R

(t)

A

J

P(pk)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

0

10

20

30

40

50

60

70

80

0

2

4

6

8

10

Q

, GATE CHARGE (nC)

g

I

= 13A

D

V

= 5V

DS

10V

15V

0.1

0.2

0.5

1

2

5

10

30

100

200

500

1000

2000

4000

7000

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0 V

GS

Coss

Crss

0.05

0.1

0.5

1

2

5

10

30

50

0.01

0.05

0.1

0.5

1

2

5

10

30

100

V

, DRAIN-SOURCE VOLTAGE (V)

RDS(ON)

LIMIT

A

DC

DS

1s

100ms

10ms

1ms

10s

V

=10V

SINGLE PULSE

R

= 125°C/W

T

= 25°C

θJA

GS

A

100us

0.001

0.01

0.1

1

10

100

300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=125°C/W

T = 25°C

θJA

A