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PBSS5520X Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PBSS5520X
Description  20 V, 5 A PNP low VCEsat (BISS) transistor
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PBSS5520X Datasheet(HTML) 2 Page - NXP Semiconductors

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2004 Nov 08
2
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
FEATURES
• High h
FE and low VCEsat at high current operation
• High collector current I
C: 5 A
• High efficiency leading to less heat generation.
APPLICATIONS
• Medium power peripheral drivers (e.g. fans and motors)
• Strobe flash units for digital still cameras and mobile
phones
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers
• Supply line switching.
DESCRIPTION
PNP low VCEsat (BISS) transistor in a SOT89 (SC-62)
plastic package.
NPN complement: PBSS4520X.
MARKING
Note
1.
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
TYPE NUMBER
MARKING CODE(1)
PBSS5520X
*1K
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
321
sym079
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−20
V
IC
collector current (DC)
−5
A
ICM
peak collector current
−10
A
RCEsat
equivalent on-resistance
54
m
Ω
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PBSS5520X
SC-62
plastic surface mounted package; collector pad for
good heat transfer; 3 leads
SOT89


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