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PDTC123TM Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PDTC123TM
Description  NPN resistor-equipped transistors; R1 = 2.2 killoohm, R2 = open
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PDTC123TM Datasheet(HTML) 4 Page - NXP Semiconductors

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PDTC123T_SER_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 March 2006
4 of 10
Philips Semiconductors
PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 k
Ω, R2 = open
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB with 60
µm copper strip line, standard footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB with 60
µm copper strip line, standard footprint.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
5
V
IO
output current
-
100
mA
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT416
[1] -
150
mW
SOT346
[1] -
250
mW
SOT883
[2][3] -
250
mW
SOT54
[1] -
500
mW
SOT23
[1] -
250
mW
SOT323
[1] -
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
SOT416
[1] -
-
833
K/W
SOT346
[1] -
-
500
K/W
SOT883
[2][3] -
-
500
K/W
SOT54
[1] -
-
250
K/W
SOT23
[1] -
-
500
K/W
SOT323
[1] -
-
625
K/W


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