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SI3443DV Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SI3443DV Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  Si3443DV, REV A Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET April 2001 2001 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1) -4 A Drain Current - Pulsed (Note 1a) -20 PD Power Dissipation for Single Operation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R θJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R θJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .443 Si3443DV 7’’ 8mm 3000 units Features -4 A, -20 V. R DS(ON) = 0.065 Ω @ VGS = -4.5 V R DS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low R DS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). 3 5 6 4 1 2 3 D D D S D G SuperSOT -6 TM General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Applications Load switch Battery protection Power management |
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