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SI3442DV Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. SI3442DV
Description  N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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SI3442DV Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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March 2001
SI3442DV
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings T
A = 25°C unless otherwise note
Symbol Parameter
SI3442DV
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source Voltage - Continuous
8
V
I
D
Drain Current - Continuous
(Note 1a)
4.1
A
- Pulsed
15
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
1
(Note 1c)
0.8
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
SI3442DV Rev. A
3
5
6
4
1
2
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications in
notebook computers, portable phones, PCMICA cards, and
other battery powered circuits where fast switching, and low
in-line power loss are needed in a very small outline surface
mount package.
4.1 A, 20 V. R
DS(ON) = 0.06
@ V
GS = 4.5 V
R
DS(ON) = 0.075
@ V
GS =2.7 V.
Proprietary SuperSOT
TM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON).
Exceptional on-resistance and maximum DC current
capability.
© 2001Fairchild Semiconductor Corporation


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