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IRFR3412TRR Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFR3412TRR Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 10 page  www.kersemi.com 1 1/22/02 IRFR3412 IRFU3412 VDSS RDS(on) max ID 100V 0.025 Ω 48A l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 48 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A IDM Pulsed Drain Current 190 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 0.95 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 6.4 V/ns TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 second 300(1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V trr Reverse Recovery Time ––– 68 100 ns TJ = 125°C, IF = 29A Qrr Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs IRRM Reverse RecoveryCurrent ––– 4.5 6.8 A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) S D G Diode Characteristics 48 190 A D-Pak I-Pak IRFR3412 IRFU3412 |
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