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IRFR3411 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFR3411 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 10 page  IRFR3411PbF IRFU3411PbF HEXFET® Power MOSFET 12/03/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.2 RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance www.kersemi.com 1 VDSS = 100V RDS(on) = 44mΩ ID = 32A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 0.83 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C PD - 95371A D-Pak IRFR3411 I-Pak IRFU3411 |
Similar Part No. - IRFR3411 |
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Similar Description - IRFR3411 |
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