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SGS23N60UFD Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SGS23N60UFD Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2001 Fairchild Semiconductor Corporation April 2001 SGS23N60UFD Rev. A IGBT SGS23N60UFD Ultra-Fast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description SGS23N60UFD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C23 A Collector Current @ TC = 100°C12 A ICM (1) Pulsed Collector Current 92 A IF Diode Continuous Forward Current @ TC = 100°C12 A IFM Diode Maximum Forward Current 92 A PD Maximum Power Dissipation @ TC = 25°C73 W Maximum Power Dissipation @ TC = 100°C29 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds 300 °C Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 1.7 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 1.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W Application AC & DC Motor controls, general purpose inverters, robotics, servo controls G C E TO-220F G C E |
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