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IRFR13N15D Datasheet(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
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IRFR13N15D Datasheet(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
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7 / 8 page  P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - Fig 14. For N-Channel HEXFET® Power MOSFETs * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit RG VDD • dv/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * IRFR/U13N15D 7 / 10 www.kersemi.com |
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