IRFB20N50K datasheet(2/7 Pages) KERSEMI

Part #	IRFB20N50K

Description	Power MOSFET

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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2

IRFB20N50K, SiHFB20N50K

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. Pulse width

≤ 400 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-58

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

-

Maximum Junction-to-Case (Drain)

RthJC

-0.45

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

500

-

V

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

-

0.61

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

3.0

-

5.0

V

Gate-Source Leakage

IGSS

VGS = ± 30 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

-

50

µA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 12 Ab

-

0.21

0.25

Ω

Forward Transconductance

gfs

VDS = 50 V, ID = 12 A

11

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

-

2870

-

pF

Output Capacitance

Coss

-

320

-

Reverse Transfer Capacitance

Crss

-34

-

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

-

3480

-

VDS = 400 V, f = 1.0 MHz

-

85

-

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 V

-

160

-

Total Gate Charge

Qg

VGS = 10 V

ID = 20 A, VDS = 400 V

see fig. 6 and 13b

-

110

nC

Gate-Source Charge

Qgs

--

33

Gate-Drain Charge

Qgd

--

54

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 20 A

RG = 7.5 Ω, VGS = 10 V, see fig. 10b

-22

-

ns

Rise Time

tr

-74

-

Turn-Off Delay Time

td(off)

-45

-

Fall Time

tf

-33

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

20

A

Pulsed Diode Forward Currenta

ISM

--

80

Body Diode Voltage

VSD

TJ = 25 °C, IS = 20 A, VGS = 0 Vb

--

1.5

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb

-

520

780

ns

Body Diode Reverse Recovery Charge

Qrr

-5.3

8.0

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

S

D

G

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