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SGP5N60RUFD Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SGP5N60RUFD Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2002 Fairchild Semiconductor Corporation SGP5N60RUFD Rev. A1 IGBT SGP5N60RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • Short circuit rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A • High input impedance • CO-PAK, IGBT with FRD : trr = 37ns (typ.) Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description SGP5N60RUFD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C8 A Collector Current @ TC = 100°C5 A ICM (1) Pulsed Collector Current 15 A IF Diode Continuous Forward Current @ TC = 100°C8 A IFM Diode Maximum Forward Current 56 A TSC Short Circuit Withstand Time @ TC = 100°C10 us PD Maximum Power Dissipation @ TC = 25°C60 W Maximum Power Dissipation @ TC = 100°C25 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 2.0 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 1.25 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. TO-220 G C E G C E G C E |
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