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SGP10N60RUFD Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. SGP10N60RUFD
Description  Short Circuit Rated IGBT
Download  8 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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SGP10N60RUFD Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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SGP10N60RUFD Rev. A1
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT T
C = 25°C unless otherwise noted
Electrical Characteristics of DIODE T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
--
V
∆B
VCES/
∆T
J
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/
°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 10mA, VCE = VGE
5.0
6.0
8.5
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 10A,
VGE = 15V
--
2.2
2.8
V
IC = 16A,
VGE = 15V
--
2.5
--
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
660
--
pF
Coes
Output Capacitance
--
115
--
pF
Cres
Reverse Transfer Capacitance
--
25
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
--
15
--
ns
tr
Rise Time
--
30
--
ns
td(off)
Turn-Off Delay Time
--
36
50
ns
tf
Fall Time
--
158
200
ns
Eon
Turn-On Switching Loss
--
141
--
uJ
Eoff
Turn-Off Switching Loss
--
215
--
uJ
Ets
Total Switching Loss
--
356
500
uJ
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
--
16
--
ns
tr
Rise Time
--
33
--
ns
td(off)
Turn-Off Delay Time
--
42
60
ns
tf
Fall Time
--
242
350
ns
Eon
Turn-On Switching Loss
--
161
--
uJ
Eoff
Turn-Off Switching Loss
--
452
--
uJ
Ets
Total Switching Loss
--
613
860
uJ
Tsc
Short Circuit Withstand Time
VCC = 300 V, VGE = 15V
@
TC = 100°C
10
--
--
us
Qg
Total Gate Charge
VCE = 300 V, IC = 10A,
VGE = 15V
--
30
45
nC
Qge
Gate-Emitter Charge
--
5
10
nC
Qgc
Gate-Collector Charge
--
8
16
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VFM
Diode Forward Voltage
IF = 12A
TC = 25°C
--
1.4
1.7
V
TC = 100°C
--
1.3
--
trr
Diode Reverse Recovery Time
IF = 12A,
di/dt = 200A/
µs
TC = 25°C
--
42
60
ns
TC = 100°C
--
60
--
Irr
Diode Peak Reverse Recovery
Current
TC = 25°C
--
3.5
6.0
A
TC = 100°C
--
5.6
--
Qrr
Diode Reverse Recovery Charge
TC = 25°C
--
80
180
nC
TC = 100°C
--
220
--


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