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SGP10N60RUFD Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. SGP10N60RUFD
Description  Short Circuit Rated IGBT
Download  8 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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SGP10N60RUFD Datasheet(HTML) 4 Page - Fairchild Semiconductor

   
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SGP10N60RUFD Rev. A1
©2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
110
0
200
400
600
800
1000
1200
1400
Cres
Coes
Cies
Common Emitter
V
GE = 0V, f = 1MHz
T
C = 25
Collector - Emitter Voltage, V
CE
[V]
10
100
10
100
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
I
C
= 10A
T
C
= 25℃ ━━
T
C = 125
℃ ------
Ton
Tr
Gate Resistance, R
G []
10
100
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 10A
T
C =
25℃ ━━
T
C = 125
℃ ------
Gate Resistance, R
G []
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 10A
T
C =
25℃ ━━
T
C = 125
℃ ------
Gate Resistance, R
G []
6
8
10
12
14
16
18
20
10
100
Ton
Tr
Common Emitter
V
GE =
± 15V, R
G = 20
T
C =
25℃ ━━
T
C = 125
℃ ------
Collector Current, I
C [A]
6
8
10
12
14
16
18
20
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE =
± 15V, R
G = 20
T
C =
25℃ ━━
T
C = 125
℃ ------
Collector Current, I
C [A]


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