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XP161A1355PR Datasheet(PDF) 1 Page - Torex Semiconductor |
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XP161A1355PR Datasheet(HTML) 1 Page - Torex Semiconductor |
1 / 5 page 1/5 XP161A1355PR-G Power MOSFET PRODUCT NAME PACKAGE ORDER UNIT XP161A1355PR SOT-89 1,000/Reel XP161A1355PR-G (*) SOT-89 1,000/Reel PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss ±8 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr 4 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ ■GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds (on)= 0.05Ω@ Vgs = 4.5V : Rds (on)= 0.07Ω@ Vgs = 2.5V : Rds (on)= 0.15Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING ■PRODUCT NAME ■ABSOLUTE MAXIMUM RATINGS ■EQUIVALENT CIRCUIT Ta = 25℃ * When implemented on a ceramic PCB ETR1124_003 G : Gate S : Source D : Drain * x represents production lot number. (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. |
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