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SGL40N150D Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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SGL40N150D Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 7 page SGL40N150D Rev. A1 ©2002 Fairchild Semiconductor Corporation Fig 14. SOA Characteristics Fig 13. Gate Charge Characteristics Fig 15. Typical Trr vs. di/dt Fig 16. Typical Trr vs. Forward Current Fig 17. Reverse Current vs. Reverse Voltage Fig 18. Typical Forward Voltage Drop vs. Forward Current 0 12345678 9 10 30 60 90 120 150 180 210 240 270 300 200A/us 100A/us di/dt = 50A/us Forward Current, IF [A] 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 IF = 10A di/dt [A/us] 300.0 600.0 900.0 1.2k 1.5k 1E-3 0.01 0.1 1 10 100 1000 100℃ T C = 125 ℃ 25℃ Reverse Voltage, V R [V] 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25℃ T C =125 ℃ Instantaneous Voltage, V F [V] 0.1 1 10 100 1000 0.01 0.1 1 10 100 Single Nonrepetitive Pulse T C = 25 oC Curves must be derated linearly with increase in temperature 50 µs 100 µs 1ms DC Operation I C MAX (Pulsed) I C MAX (Continuous) Collector - Emitter Voltage, V CE [V] 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 Common Emitter R L = 15Ω , VCC = 600V T C = 25 oC Gate Charge, Qg [nC] |
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