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XC9401A605MR-G Datasheet(PDF) 5 Page - Torex Semiconductor |
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XC9401A605MR-G Datasheet(HTML) 5 Page - Torex Semiconductor |
5 / 19 page 5/19 XC9401 Series ■ ELECTRICAL CHARACTERISTICS XC9401 Series, Type A Ta=25 oC PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT VDD Voltage Range VDD 9 - 15 V ① ISEN Voltage VISEN VISEN=SWEEP (*1), VSINE =1V 0.2644 0.2783 0.2922 V ① VSINE Voltage Range (*2) VSINE GND - 1.8 V ① UVLO Detect Voltage VUVLO VDD=SWEEP (*3) 5.5 6.5 7.5 V ① UVLO Release Voltage VUVLOR VDD=SWEEP (*4) 6.5 7.5 8.5 V ① UVLO Hysteresis Width VUVLOH VUVLOH=VUVLOR - VUVLO - 1.1 - V ① Supply Current (*5) IDD VDD=VEN/DIM=15V - 250 300 μ A ① Stand-by Current (*6) ISTB VDD=15V, VEN/DIM=GND, VSINE=GND - 225 280 μ A ① VDD Overvoltage Protection Voltage VOVP VDD=SWEEP (*3) , VEN/DIM=VDD 17 18 19 V ① VDD Overvoltage Protection Release Voltage VOVPR VDD=SWEEP (*4), VEN/DIM=VDD 15.5 16.5 17.5 V ① VDD Overvoltage Protection Hysteresis Width VOVPH VOVPH=VOVP - VOVPR - 1.5 - V ① VDD Overvoltage Protection Discharge Current (*7) IOVP VDD=19V - 30 - mA ① IGATE = -10mA GATE “H” ON Resistance RGATEH RGATEH = (VDD-VGATE) / IGATE 2 5 8 Ω ③ VISEN=1V, R1=300Ω GATE “L” ON Resistance RGATEL RGATEL= VGATE / IR1 (*8) - 5 - Ω ④ OFF Time (*9) tOFF VISEN=0.4V, VSINE=1V - 6 - μ s ① Minimum ON Time tONMIN VISEN=1V - 0.2 - μ s ① Current Limit Voltage (*10) VLIM VISEN=SWEEP, VSINE=1.4V 0.65 0.70 0.95 V ① Thermal Shutdown Temperature (*11) TTSD - 150 - oC ① Thermal Shutdown Release Temperature TTSDR - 130 - oC ① Thermal Shutdown Hysteresis Width THYS - 20 - oC ① PWM Dimmer Delay Time1 (*12) tPWMDIM1 VEN/DIM=2.2V to GND - 0.3 4.0 μ s ② PWM Dimmer Delay Time2 (*13) tPWMDIM2 VEN/DIM=GND to 2.2V 100 140 200 μ s ② EN/DIM “H” Voltage VEN/DIMH 2.2 - 15.0 V ① EN/DIM “L” Voltage VEN/DIML GND - 0.4 V ① EN/DIM Bias Current IEN/DIMH VEN/DIM=15V - - 32 μ A ① Unless otherwise stated, GND standard, VDD=13V, VEN/DIM=VDD, VISEN=GND, VSINE=5.5V (*1) ISEN pin voltage measured at start of GATE pin switching. (*2) Indicates VSINE pin voltage at which OFF TIME 6μs switching becomes possible. (*3) VDD pin voltage measured when GATE pin=L occurs. (*4) VDD pin voltage measured when GATE pin=H occurs. (*5) Indicates internal supply current when “H” level is input into EN/DIM pin and all circuits are activated. (When not switching.) (*6) Indicates internal supply current when “L” level is input into EN/DIM pin and the switching circuit is stopped. (*7) Indicates the current that discharges the capacitance between the VDD and GND pins at VOVP. (*8) Please refer to P.7 “CIRCUIT④”. (*9) May not be fixed at 6μs when UVLO is detected or during DIM signal control. (*10) When the current limit voltage VLIM is exceeded, off time is extended to about 140μs to prevent element damage. For details, refer to the operation description. (*11) To protect the IC from thermal destruction, thermal shutdown activates when the chip temperature reaches 150oC and forcibly sets the GATE pin voltage to “L”. When the chip temperature falls to 130 oC, operation resumes. (*12) Time from attainment of EN/DIM “L” voltage until GATE pin=L. (*13) Time from attainment of EN/DIM “H” voltage until GATE pin=H. |
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