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SGH40N60UF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SGH40N60UF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2002 Fairchild Semiconductor Corporation SGH40N60UF Rev. A1 IGBT SGH40N60UF Ultra-Fast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impedance Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description SGH40N60UF Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C40 A Collector Current @ TC = 100°C20 A ICM (1) Pulsed Collector Current 160 A PD Maximum Power Dissipation @ TC = 25°C 160 W Maximum Power Dissipation @ TC = 100°C64 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case -- 0.77 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. G C E TO-3P G C E G C E |
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