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SGH15N60RUF Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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SGH15N60RUF Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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SGH15N60RUF Rev. A1 ©2002 Fairchild Semiconductor Corporation Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆B VCES/ ∆T J Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 15mA, VCE = VGE 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 15A, VGE = 15V -- 2.2 2.8 V IC = 24A, VGE = 15V -- 2.5 -- V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 948 -- pF Coes Output Capacitance -- 101 -- pF Cres Reverse Transfer Capacitance -- 33 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 25°C -- 17 -- ns tr Rise Time -- 33 -- ns td(off) Turn-Off Delay Time -- 44 65 ns tf Fall Time -- 118 200 ns Eon Turn-On Switching Loss -- 320 -- uJ Eoff Turn-Off Switching Loss -- 356 -- uJ Ets Total Switching Loss -- 676 950 uJ td(on) Turn-On Delay Time VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 125°C -- 20 -- ns tr Rise Time -- 34 -- ns td(off) Turn-Off Delay Time -- 48 70 ns tf Fall Time -- 212 350 ns Eon Turn-On Switching Loss -- 340 -- uJ Eoff Turn-Off Switching Loss -- 695 -- uJ Ets Total Switching Loss -- 1035 1450 uJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC = 15A, VGE = 15V -- 42 60 nC Qge Gate-Emitter Charge -- 7 10 nC Qgc Gate-Collector Charge -- 17 24 nC Le Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH |
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