DRV8816

SLRS063 – SEPTEMBER 2013

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ELECTRICAL CHARACTERISTICS

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLIES (VBB)

VBB

VBB operating voltage

8

38

V

6

mA

VBB operating supply current

Charge pump on, Outputs disabled

3.2

mA

10

µA

CONTROL INPUTS (IN1, IN2, EN1, EN2, nSLEEP)

Input logic low voltage

0

0.8

IN1, IN2, EN1, EN2

V

Input logic high voltage

2

5.5

Input logic low current

–20

+20

IN1, IN2, EN2

μA

Input logic high current

20

Input logic low current

16

40

EN1

μA

Input logic high current

40

100

Input logic low voltage

0.8

V

Input logic high voltage

2.2

V

nSLEEP

Input logic low current

10

μA

Input logic high current

27

50

Pulldown resistance

100

k

Ω

SERIAL AND CONTROL OUTPUT (nFAULT)

Output logic low voltage

0.4

V

DMOS DRIVERS (OUT1, OUT2, SENSE)

0.48

0.74

0.85

Output ON resistance

Ω

0.35

0.52

0.7

SENSE trip voltage

500

mV

1.4

Body diode forward voltage

V

1.4

INx, Change to source or sink ON

600

Propagation delay time

ns

INx, Change to source or sink OFF

100

Crossover delay

500

ns

DAGain

Differential amplifier gain

Sense = 0.1 V to 0.4 V

5

V/V

Protection Circuits

VBB undervoltage lockout

VBB rising

6.5

7.5

V

VBB rising; CPUV recovery

12

13.8

V

Overcurrent protection trip level

3

A

Overcurrent deglitch time

3.0

µs

Overcurrent retry time

1.6

ms

Thermal shutdown temperature

160

°C

15

°C

Thermal shutdown hysteresis

175

°C

15

°C

(1)

Whenever VCP is less than VM + 10 V, a CPUV event occurs. This fault will be asserted whenever VBB is below 12 V. Note that the H-

6

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