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DRV8816 Datasheet(PDF) 6 Page - Texas Instruments |
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DRV8816 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 17 page DRV8816 SLRS063 – SEPTEMBER 2013 www.ti.com ELECTRICAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES (VBB) VBB VBB operating voltage 8 38 V fPWM < 50 kHz 6 mA IVBB VBB operating supply current Charge pump on, Outputs disabled 3.2 mA IVBBQ VBB sleep-mode supply current nSLEEP = 0, TJ = 25°C 10 µA CONTROL INPUTS (IN1, IN2, EN1, EN2, nSLEEP) VIL Input logic low voltage VIN = 0.8 V 0 0.8 IN1, IN2, EN1, EN2 V VIH Input logic high voltage VIN = 2.0 V 2 5.5 IIL Input logic low current VIN = 0.8 V –20 +20 IN1, IN2, EN2 μA IIH Input logic high current VIN = 2.0 V 20 IIL Input logic low current VIN = 0.8 V 16 40 EN1 μA IIH Input logic high current VIN = 2.0 V 40 100 VIL Input logic low voltage VIN = 0.8 V 0.8 V VIH Input logic high voltage VIN = 2.8 V 2.2 V nSLEEP IIL Input logic low current VIN = 0.8 V 10 μA IIH Input logic high current VIN = 2.8 V 27 50 RPD Pulldown resistance 100 k Ω SERIAL AND CONTROL OUTPUT (nFAULT) VOL Output logic low voltage Isink = 1 mA 0.4 V DMOS DRIVERS (OUT1, OUT2, SENSE) Source driver, IOUT = –2.8 A, TJ = 25°C 0.48 Source driver, IOUT = –2.8 A, TJ = 125°C 0.74 0.85 Rds(ON) Output ON resistance Ω Sink driver, IOUT = –2.8 A, TJ = 25°C 0.35 Sink driver, IOUT = –2.8 A, TJ = 125°C 0.52 0.7 VTRP SENSE trip voltage RSENSE between SENSE and GND 500 mV Source diode, If = –2.8 A 1.4 Vf Body diode forward voltage V Sink diode, If = 2.8 A 1.4 INx, Change to source or sink ON 600 tpd Propagation delay time ns INx, Change to source or sink OFF 100 tCOD Crossover delay 500 ns DAGain Differential amplifier gain Sense = 0.1 V to 0.4 V 5 V/V Protection Circuits VUVLO VBB undervoltage lockout VBB rising 6.5 7.5 V VCPUV VCP undervoltage lockout(1) VBB rising; CPUV recovery 12 13.8 V IOCP Overcurrent protection trip level 3 A tDEG Overcurrent deglitch time 3.0 µs tOCP Overcurrent retry time 1.6 ms TOTW Thermal shutdown temperature Die temperature Tj 160 °C TOTW HYS Thermal shutdown hysteresis Die temperature Tj 15 °C TOTS Thermal shutdown hysteresis Die temperature Tj 175 °C TOTS HYS Thermal shutdown hysteresis Die temperature Tj 15 °C (1) Whenever VCP is less than VM + 10 V, a CPUV event occurs. This fault will be asserted whenever VBB is below 12 V. Note that the H- bridges will remain enabled until VBB = VUVLO even through nFAULT is pulled low. 6 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: DRV8816 |
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