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SGF5N150UF Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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SGF5N150UF Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page SGF5N150UF Rev. B ©2003 Fairchild Semiconductor Corporation 010 20 30 0 2 4 6 8 10 Common Emitter R L = 120 Ω, V CC = 600V T C = 25 o C Gate Charge, Qg [nC] 20 40 60 80 100 200 400 600 800 1000 1200 Vcc = 600V Rg = 10 Ω Vge = 10V Ic = 3A Ic = 5A Ic = 10A Tc [℃] 0 5 10 15 20 25 30 100 200 300 400 500 600 Vcc = 600V Ic = 5A Esw Eon Eoff Rg [ Ω] 110 0 200 400 600 800 1000 1200 Cres Coes Cies Vce [V] Fig 8. Typical Gate Charge Characteristic Fig 9. Typical Switching Loss vs. Gate Resistance Fig 10. Typical Switching Loss vs. Case Temperature Fig 11. Typical Switching Loss vs. Collector Current Fig 12. Turn-Off SOA 46 8 10 0.2 0.4 0.6 0.8 1.0 1.2 Vcc = 600V Rg = 10 Ω Tc = 100℃ Eon Eoff Esw Ic [A] 1 10 100 1000 1 10 Safe Operating Area Vge = 20V, Tc = 100℃ Vce [V] Fig 7. Typical Capacitance vs. Collector to Emitter Voltage |
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