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BQ2019 Datasheet(PDF) 11 Page - Texas Instruments

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Part # BQ2019
Description  ADVANCED BATTERY MONITORIC
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ2019 Datasheet(HTML) 11 Page - Texas Instruments

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bq2019
ADVANCED BATTERY MONITOR IC
SLUS465E – DECEMBER 1999 – REVISED FEBRUARY 2003
11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
register interface (continued)
Table 4. bq2019 Registers
HDQ
ADDRESS
NAME
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
0x78–0x7F
IDROM
8 bytes of factory-programmed ROM
0x77
CAL/OFFCTH
COMPEN
CALREQ
CALOK
CHGOFF
Flash-shadowed VFC offset bits 19–16
0x76
OFFCTM
Flash-shadowed offset register bits 15–8
0x75
OFFCTL
Flash-shadowed offset register bits 7–0
0x74
Reserved
0x73
Reserved
0x72
Reserved
0x71
Reserved
0x70
FPA
Program address byte
0x6F
FPD
Flash program data byte
0x6E
DCRH
Discharge count register high byte
0x6D
DCRL
Discharge count register low byte
0x6C
CCRH
Charge count register high byte
0x6B
CCRL
Charge count register low byte
0x6A
SCRH
Self-discharge count register high byte
0x69
SCRL
Self-discharge count register low byte
0x68
DTCH
Discharge timer counter register high byte
0x67
DTCL
Discharge timer count register low byte
0x66
CTCH
Charge timer counter register high byte
0x65
CTCL
Charge timer counter register low byte
0x64
MODE/WOE
TVOS
DISREG
STC
STD
WOE2
WOE1
WOE0
BIT0
0x63
CLR
RSVD
POR
STAT
CTC
DTC
SCR
CCR
DCR
0x62
FCMD
Flash/control command register
0x61
TMPH
Reserved
TEMP[8]
0x60
TMPL
TEMP[7:0]
0x40–0x5F
Flash
PAGE2, 32 bytes of flash
0x20–0x3F
Flash
PAGE1, 32 bytes of flash
0x00–0x1F
RAM/flash
PAGE0, 32 bytes of flash-shadowed RAM
memory
ID ROM
The bq2019 has 8 bytes of ID ROM. This data field can be factory programmed to the customer request, insuring
a unique and secure product serialization. Contact your Texas Instruments representative for details.
flash-shadowed RAM
The host system has direct access to read and modify 32 bytes of RAM. These 32 bytes are shadowed by 32
bytes of flash to provide nonvolatile storage of battery conditions. The information stored in RAM is transferred
to flash, and the information stored in flash is transferred to RAM by writing a single command into the flash
command register (FCMD). When a power-on-reset occurs, PAGE0 of flash and three flash-shadowed offset
bytes are transferred to RAM. (The host is responsible for storing offset value in flash.) For more details, refer
to the flash command register section.


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