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LM5110-2MX Datasheet(PDF) 1 Page - Texas Instruments |
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LM5110-2MX Datasheet(HTML) 1 Page - Texas Instruments |
1 / 18 page LM5110 www.ti.com SNVS255A – MAY 2004 – REVISED MAY 2004 LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability Check for Samples: LM5110 1 FEATURES PACKAGE 2 • Independently Drives Two N-Channel • SOIC-8 MOSFETs • WSON-10 (4 mm x 4 mm) • Compound CMOS and Bipolar Outputs Reduce Output Current Variation DESCRIPTION The LM5110 Dual Gate Driver replaces industry • 5A sink/3A Source Current Capability standard gate drivers with improved peak output • Two Channels can be Connected in Parallel to current and efficiency. Each “compound” output driver Double the Drive Current stage includes MOS and bipolar transistors operating • Independent Inputs (TTL Compatible) in parallel that together sink more than 5A peak from capacitive loads. Combining the unique • Fast Propagation Times (25 ns Typical) characteristics of MOS and bipolar devices reduces • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall drive current variation with voltage and temperature. with 2 nF Load) Separate input and output ground pins provide • Dedicated Input Ground Pin (IN_REF) for Split Negative Drive Capability allowing the user to drive Supply or Single Supply Operation MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are • Outputs Swing from VCC to VEE which can be referenced to a dedicated input ground (IN_REF). Negative Relative to Input Ground The gate driver outputs swing from VCC to the output • Available in Dual Non-inverting, Dual Inverting ground VEE which can be negative with respect to and Combination Configurations IN_REF. The ability to hold MOSFET gates off with a negative VGS voltage reduces losses when driving • Shutdown Input Provides Low Power Mode low threshold voltage MOSFETs often used as • Supply Rail Under-voltage Lockout Protection synchronous rectifiers. When driving with • Pin-out Compatible with Industry Standard conventional positive only gate voltage, the IN_REF Gate Drivers and VEE pins are connected together and referenced to a common ground. Under-voltage lockout TYPICAL APPLICATIONS protection and a shutdown input pin are also provided. The drivers can be operated in parallel with • Synchronous Rectifier Gate Drivers inputs and outputs connected to double the drive • Switch-mode Power Supply Gate Driver current capability. This device is available in the • Solenoid and Motor Drivers SOIC-8 and the thermally-enhanced WSON-10 packages. • Power Level Shifter 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 2004, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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