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PIC18F65J50 Datasheet(PDF) 5 Page - Microchip Technology |
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PIC18F65J50 Datasheet(HTML) 5 Page - Microchip Technology |
5 / 16 page © 2009 Microchip Technology Inc. DS80481A-page 5 PIC18F87J50 FAMILY Data Sheet Clarifications The following typographic corrections and clarifications are to be noted for the latest version of the device data sheet (DS39775B): 1. Module: Table 28-1: Memory Programming Requirements On page 430, parameter D132B is renamed, and the minimum and maximum voltage levels and conditions column of the Self-Timed Erase or Write for VDD and VDDCORE for are included. The TWE parameter number and conditions column are changed. The changed content is indicated in bold text in Table 28-1: TABLE 28-1: MEMORY PROGRAMMING REQUIREMENTS Note: Corrections are shown in bold. Where possible, the original bold text formatting has been removed for clarity. DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Param No. Sym Characteristic Min Typ† Max Units Conditions Program Flash Memory D130 EP Cell Endurance 10K — — E/W -40 °C to +85°C D131 VPR VDDCORE for Read VMIN —3.6 V VMIN = Minimum operating voltage D132 VPEW Voltage for Self-Timed Erase or Write VDD VDDCORE 2.35 2.25 — — 3.6 2.7 V V ENVREG tied to VDD ENVREG tied to VSS D133A TIW Self-Timed Write Cycle Time — 2.8 — ms D133B TIE Self-Timed Page Erase Cycle Time —33.0— ms D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications are violated D135 IDDP Supply Current during Programming —10— mA D140 TWE Writes per Erase Cycle — — 1 — For each physical address † Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. |
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