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PIC18F65J50 Datasheet(PDF) 5 Page - Microchip Technology

Part # PIC18F65J50
Description  PIC18F87J50 Family Silicon Errata and Data Sheet Clarification
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC18F65J50 Datasheet(HTML) 5 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS80481A-page 5
PIC18F87J50 FAMILY
Data Sheet Clarifications
The following typographic corrections and clarifications
are to be noted for the latest version of the device data
sheet (DS39775B):
1. Module: Table 28-1: Memory
Programming Requirements
On page 430, parameter D132B is renamed, and
the minimum and maximum voltage levels and
conditions column of the Self-Timed Erase or Write
for VDD and VDDCORE for are included. The TWE
parameter number and conditions column are
changed.
The changed content is indicated in bold text in
Table 28-1:
TABLE 28-1:
MEMORY PROGRAMMING REQUIREMENTS
Note:
Corrections are shown in bold. Where
possible, the original bold text formatting
has been removed for clarity.
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Program Flash Memory
D130
EP
Cell Endurance
10K
E/W -40
°C to +85°C
D131
VPR
VDDCORE for Read
VMIN
—3.6
V
VMIN = Minimum operating
voltage
D132
VPEW Voltage for Self-Timed Erase or
Write
VDD
VDDCORE
2.35
2.25
3.6
2.7
V
V
ENVREG tied to VDD
ENVREG tied to VSS
D133A TIW
Self-Timed Write Cycle Time
2.8
ms
D133B TIE
Self-Timed Page Erase Cycle
Time
—33.0—
ms
D134
TRETD Characteristic Retention
20
Year Provided no other
specifications are violated
D135
IDDP
Supply Current during
Programming
—10—
mA
D140
TWE
Writes per Erase Cycle
1
For each physical address
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.


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