LM5110-1SD datasheet(5/18 Pages) TI

Part #	LM5110-1SD

Description	LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability

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Manufacturer	TI [Texas Instruments]

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INPUT

OUTPUT

tf

tD1

tr

tD2

90%

10%

50%

INPUT

OUTPUT

tr

tD1

tf

tD2

90%

10%

50%

LM5110

www.ti.com

SNVS255A – MAY 2004 – REVISED MAY 2004

Electrical Characteristics (continued)

TJ = −40°C to +125°C, VCC = 12V, VEE = IN_REF = 0V, nSHDN = VCC, No Load on OUT_A or OUT_B, unless otherwise

specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VSDR

Shutdown Threshold

nSHDN rising

0.8

1.5

2.2

V

VSDH

Shutdown Hysteresis

165

mV

OUTPUT DRIVERS

ROH

Output Resistance High

IOUT = −10 mA

30

50

Ω

ROL

Output Resistance Low

IOUT = + 10 mA

1.4

2.5

Ω

ISource

Peak Source Current

OUTA/OUTB = VCC/2,

3

A

200 ns Pulsed Current

ISink

Peak Sink Current

OUTA/OUTB = VCC/2,

5

A

200 ns Pulsed Current

SWITCHING CHARACTERISTICS

td1

Propagation Delay Time Low to

CLOAD = 2 nF, see Figure 6

25

40

ns

High, IN rising (IN to OUT)

td2

Propagation Delay Time High to

CLOAD = 2 nF, see Figure 6

25

40

ns

Low, IN falling (IN to OUT)

tr

Rise Time

CLOAD = 2.0 nF, see Figure 6

14

25

ns

tf

Fall Time

CLOAD = 2 nF, see Figure 6

12

25

ns

LATCHUP PROTECTION

AEC - Q100, Method 004

TJ = 150°C

500

mA

Timing Waveforms

(b)

(a)

Figure 5. Inverting Timing Waveforms

Figure 6. Non-Inverting Timing Waveforms

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