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CM35MXA-24S Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part No. CM35MXA-24S
Description  Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
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Maker  POWEREX [Powerex Power Semiconductors]
Homepage  http://www.pwrx.com
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CM35MXA-24S Datasheet(HTML) 2 Page - Powerex Power Semiconductors

 
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CM35MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
2
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings,
Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Rating
Units
Collector-Emitter Voltage (VGE = 0V)
VCES
1200
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES
±20
Volts
Collector Current (DC, TC = 125°C)*2,*4
IC
35
Amperes
Collector Current (Pulse, Repetitive)*3
ICRM
70
Amperes
Total Power Dissipation (TC = 25°C)*2,*4
Ptot
355
Watts
Emitter Current*2
IE*1
35
Amperes
Emitter Current (Pulse, Repetitive)*3
IERM*1
70
Amperes
Maximum Junction Temperature, Instantaneous Event (Overload)
Tj(max)
175
°C
Brake Part IGBT/ClampDi
Characteristics
Symbol
Rating
Units
Collector-Emitter Voltage (VGE = 0V)
VCES
1200
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES
±20
Volts
Collector Current (DC, TC = 125°C)*2,*4
IC
35
Amperes
Collector Current (Pulse, Repetitive)*3
ICRM
70
Amperes
Total Power Dissipation (TC = 25°C)*2,*4
Ptot
355
Watts
Repetitive Peak Reverse Voltage (VGE = 0V)
VRRM
1200
Volts
Forward Current*2
IF*1
35
Amperes
Forward Current (Pulse, Repetitive)*3
IFRM*1
70
Amperes
Maximum Junction Temperature, Instantaneous Event (Overload)
Tj(max)
175
°C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
1
2
3 4 5
6
7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0
0
19.6
22.0
20.4
30.3
31.3
43.9
44.9
18.4
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di
CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
24.9
26.2 25.8
34.2
40.8
43.8
Tr
Br
Di
Br
Di
UN
Di
VN
Di
VP
Tr
VP
Di
UP
Tr
UP
Di
WN
Tr
UN
Tr
VN
Tr
WN
Tr
WP
Th
CR
RN
CR
SN
CR
TN
CR
RP
CR
SP
CR
TP
Di
WP


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