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CM35MXA-24S Datasheet(PDF) 6 Page - Powerex Power Semiconductors

Part No. CM35MXA-24S
Description  Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
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Maker  POWEREX [Powerex Power Semiconductors]
Homepage  http://www.pwrx.com
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CM35MXA-24S Datasheet(HTML) 6 Page - Powerex Power Semiconductors

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CM35MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
6
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics,
Tj = 25°C unless otherwise specified (continued)
Converter Part ConvDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Repetitive Peak Reverse Current
IRRM
VR = VRRM, Tj = 150°C
4.0
mA
Forward Voltage
VF
IF = 35A*6
1.2
1.6
Volts
(Terminal)
NTC Thermistor Part
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Zero Power Resistance
R25
TC = 25°C*4
4.85
5.00
5.15
kΩ
Deviation of Resistance
∆R/R
TC = 100°C*4, R100 = 493Ω
-7.3
+7.8
%
B Constant
B(25/50)
Approximate by Equation*7
3375
K
Power Dissipation
P25
TC = 25°C*4
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4
Rth(j-c)Q
Per Inverter IGBT
0.42
K/W
Thermal Resistance, Junction to Case*4
Rth(j-c)D
Per Inverter FWDi
0.69
K/W
Thermal Resistance, Junction to Case*4
Rth(j-c)Q
Per Brake IGBT
0.42
K/W
Thermal Resistance, Junction to Case*4
Rth(j-c)D
Per Brake ClampDi
0.69
K/W
Thermal Resistance, Junction to Case*4
Rth(j-c)D
Per Converter ConvDi
0.45
K/W
Contact Thermal Resistance,
Rth(c-f)
Thermal Grease Applied,
15
K/kW
Case to Heatsink*4
Per 1 Module*8
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 B(25/50) = In(
R25
)/(
1
1
)
R50 T25
T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
1
2
3 4 5
6
7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0
0
19.6
22.0
20.4
30.3
31.3
43.9
44.9
18.4
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di
CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
24.9
26.2 25.8
34.2
40.8
43.8
Tr
Br
Di
Br
Di
UN
Di
VN
Di
VP
Tr
VP
Di
UP
Tr
UP
Di
WN
Tr
UN
Tr
VN
Tr
WN
Tr
WP
Th
CR
RN
CR
SN
CR
TN
CR
RP
CR
SP
CR
TP
Di
WP


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