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CM35MXA-24S Datasheet(PDF) 5 Page - Powerex Power Semiconductors

Part No. CM35MXA-24S
Description  Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
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Maker  POWEREX [Powerex Power Semiconductors]
Homepage  http://www.pwrx.com
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CM35MXA-24S Datasheet(HTML) 5 Page - Powerex Power Semiconductors

 
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CM35MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
5
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics,
Tj = 25°C unless otherwise specified
Brake Part IGBT/ClampDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Cutoff Current
ICES
VCE = VCES, VGE = 0V
1.0
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 3.5mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 35A, VGE = 15V, Tj = 25°C*6
1.80
2.25
Volts
(Terminal)
IC = 35A, VGE = 15V, Tj = 125°C*6
2.00
Volts
IC = 35A, VGE = 15V, Tj = 150°C*6
2.05
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 35A, VGE = 15V, Tj = 25°C*6
1.70
2.15
Volts
(Chip)
IC = 35A, VGE = 15V, Tj = 125°C*6
1.90
Volts
IC = 35A, VGE = 15V, Tj = 150°C*6
1.95
Volts
Input Capacitance
Cies
3.5
nF
Output Capacitance
Coes
VCE = 10V, VGE = 0V
0.7
nF
Reverse Transfer Capacitance
Cres
0.06
nF
Gate Charge
QG
VCC = 600V, IC = 35A, VGE = 15V
82
nC
Turn-on Delay Time
td(on)
300
ns
Rise Time
tr
VCC = 600V, IC = 35A, VGE = ±15V,
200
ns
Turn-off Delay Time
td(off)
RG = 18Ω, Inductive Load
600
ns
Fall Time
tf
300
ns
Forward Voltage
VF
IE = 35A, VGE = 0V, Tj = 25°C*6
1.80
2.25
Volts
(Terminal)
IE = 35A, VGE = 0V, Tj = 125°C*6
1.80
Volts
IE = 35A, VGE = 0V, Tj = 150°C*6
1.80
Volts
Forward Voltage
VF
IE = 35A, VGE = 0V, Tj = 25°C*6
1.70
2.15
Volts
(Chip)
IE = 35A, VGE = 0V, Tj = 125°C*6
1.70
Volts
IE = 35A, VGE = 0V, Tj = 150°C*6
1.70
Volts
Reverse Recovery Time
trr
VCC = 600V, IE = 35A, VGE = ±15V
300
ns
Reverse Recovery Charge
Qrr
RG = 18Ω, Inductive Load
1.9
µC
Turn-on Switching Energy per Pulse
Eon
VCC = 600V, IC = IE = 35A,
4.2
mJ
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 18Ω,
3.7
mJ
Reverse Recovery Energy per Pulse
Err
Tj = 150°C, Inductive Load
3.5
mJ
Internal Gate Resistance
rg
0
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.


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