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CM35MXA-24S Datasheet(PDF) 4 Page - Powerex Power Semiconductors

Part No. CM35MXA-24S
Description  Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

CM35MXA-24S Datasheet(HTML) 4 Page - Powerex Power Semiconductors

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CM35MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
4
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics,
Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Cutoff Current
ICES
VCE = VCES, VGE = 0V
1.0
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 3.5mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 35A, VGE = 15V, Tj = 25°C*6
1.80
2.25
Volts
(Terminal)
IC = 35A, VGE = 15V, Tj = 125°C*6
2.00
Volts
IC = 35A, VGE = 15V, Tj = 150°C*6
2.05
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 35A, VGE = 15V, Tj = 25°C*6
1.70
2.15
Volts
(Chip)
IC = 35A, VGE = 15V, Tj = 125°C*6
1.90
Volts
IC = 35A, VGE = 15V, Tj = 150°C*6
1.95
Volts
Input Capacitance
Cies
3.5
nF
Output Capacitance
Coes
VCE = 10V, VGE = 0V
0.7
nF
Reverse Transfer Capacitance
Cres
0.06
nF
Gate Charge
QG
VCC = 600V, IC = 35A, VGE = 15V
82
nC
Turn-on Delay Time
td(on)
300
ns
Rise Time
tr
VCC = 600V, IC = 35A, VGE = ±15V,
200
ns
Turn-off Delay Time
td(off)
RG = 18Ω, Inductive Load
600
ns
Fall Time
tf
300
ns
Emitter-Collector Voltage
VEC*1
IE = 35A, VGE = 0V, Tj = 25°C*6
1.80
2.25
Volts
(Terminal)
IE = 35A, VGE = 0V, Tj = 125°C*6
1.80
Volts
IE = 35A, VGE = 0V, Tj = 150°C*6
1.80
Volts
Emitter-Collector Voltage
VEC*1
IE = 35A, VGE = 0V, Tj = 25°C*6
1.70
2.15
Volts
(Chip)
IE = 35A, VGE = 0V, Tj = 125°C*6
1.70
Volts
IE = 35A, VGE = 0V, Tj = 150°C*6
1.70
Volts
Reverse Recovery Time
trr*1
VCC = 600V, IE = 35A, VGE = ±15V
300
ns
Reverse Recovery Charge
Qrr*1
RG = 18Ω, Inductive Load
1.9
µC
Turn-on Switching Energy per Pulse
Eon
VCC = 600V, IC = IE = 35A,
4.2
mJ
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 18Ω,
3.7
mJ
Reverse Recovery Energy per Pulse
Err*1
Tj = 150°C, Inductive Load
3.5
mJ
Internal Lead Resistance
RCC' + EE'
Main Terminals-Chip,
5.7
mΩ
Per Switch,TC = 25°C*4
Internal Gate Resistance
rg
Per Switch
0
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
1
2
3 4 5
6
7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0
0
19.6
22.0
20.4
30.3
31.3
43.9
44.9
18.4
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di
CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
24.9
26.2 25.8
34.2
40.8
43.8
Tr
Br
Di
Br
Di
UN
Di
VN
Di
VP
Tr
VP
Di
UP
Tr
UP
Di
WN
Tr
UN
Tr
VN
Tr
WN
Tr
WP
Th
CR
RN
CR
SN
CR
TN
CR
RP
CR
SP
CR
TP
Di
WP


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