SFH628A, SFH6286

www.vishay.com

Vishay Semiconductors

Rev. 2.0, 11-Jul-13

2

Document Number: 83722

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

DC forward current

± 50

mA

Surge forward current

t

 10 μs

± 2.5

A

Power dissipation

76

mW

OUTPUT

Collector emitter voltage

55

V

Emitter collector voltage

7V

Collector current

50

mA

100

mA

Power dissipation

150

mW

COUPLER

Isolation test voltage



5300

Creepage distance

7mm

Clearance distance

7mm

Insulation thickness between



0.4

mm

Comparative tracking index per DIN IEC112/



175

Isolation resistance





Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to +100

°C

max. 10 s, dip soldering distance

260

°C

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.1

1.5

V

Capacitance

45

pF

Thermal resistance

1070

K/W

OUTPUT

Collector emitter leakage current

10

200

nA

Collector emitter capacitance

7pF

Thermal resistance

500

K/W

COUPLER

Collector emitter saturation

voltage

SFH628A-2

0.25

0.4

V

SFH6286-2

0.25

0.4

V

SFH628A-3

0.25

0.4

V

SFH6286-3

0.25

0.4

V

SFH628A-4

0.25

0.4

V

SFH6286-4

0.25

0.4

V