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RGP10K Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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RGP10K Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page RPG10A - RPG10M, Rev. A RGP10A - RGP10M 1.0 Ampere Glass Passivated Fast Recovery Rectifiers Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Value Units IO Average Rectified Current .375 " lead length @ TL = 55 °C 1.0 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 30 A PD Total Device Dissipation Derate above 25 °C 2.5 17 W mW/ °C RθJA Thermal Resistance, Junction to Ambient 50 °C/W Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +175 °C ©1999 Fairchild Semiconductor Corporation Features • 1.0 ampere operation at T A = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical I R less than 1µA. • Fast switching for high efficiency. Parameter Device Units 10A 10B 10D 10G 10J 10K 10M Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V Maximum RMS Voltage 35 70 140 280 420 560 700 V DC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V Maximum Reverse Current @ rated VR TA = 25 °C TA = 150 °C 5.0 200 µA µA Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 150 250 500 nS Maximum Forward Voltage @ 1.0 A 1.3 V Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 15 pF DO-41 COLOR BAND DENOTES CATHODE 1.0 min (25.4) 0.107 (2.72) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71) 0.205 (5.21) 0.160 (4.06) Dimensions in inches (mm) Discrete POWER & Signal Technologies |
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