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RGF1B Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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RGF1B Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page RGF1A-RGF1M, Rev. E RGF1A - RGF1M 1.0 Ampere Fast Recovery Rectifiers Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics T A = 25°C unless otherwise noted 1998 Fairchild Semiconductor International Features • Glass passivated junction. • For surface mounted application. • Low forward voltage drop. • High current capability. • Easy pick and place. • High surge current capability. SMA/DO-214AC COLOR BAND DENOTES CATHODE Symbol Parameter Value Units IO Average Rectified Current @ TL = 125 °C 1.0 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 30 A PD Total Device Dissipation Derate above 25 °C 1.76 11.7 W mW/ °C RθJA Thermal Resistance, Junction to Ambient ** 85 °C/W RθJL Thermal Resistance, Junction to Lead** 28 °C/W Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +175 °C Parameter Device Units 1A 1B 1D 1G 1J 1K 1M Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V Maximum RMS Voltage 35 70 140 280 420 560 700 V DC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V Maximum Reverse Current @ rated VR TA = 25 °C TA = 125 °C 5.0 100 µA µA Maximum Forward Voltage @ 1.0 A 1.3 V Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 150 250 500 nS Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 8.5 pF 2 1 0.208 (5.283) 0.188 (4.775) 0.181 (4.597) 0.157 (3.988) 0.096 (2.438) 0.078 (1.981) 0.062 (1.575) 0.055 (1.397) 0.008 (0.203) 0.002 (0.051) 0.012 (0.305) 0.006 (0.152) 0.060 (1.524) 0.030 (0.762) 0.114 (2.896) 0.098 (2.489) + 3.93 3.73 1.67 1.47 2.38 2.18 5.49 5.29 Minimum Recomm ended Land Pattern |
Similar Part No. - RGF1B |
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Similar Description - RGF1B |
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