RFP70N03 datasheet(4/6 Pages) FAIRCHILD

Part #	RFP70N03

Description	70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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4 / 6 page

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RFP70N03, RF1S70N03, RF1S70N03SM

FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

TEMPERATURE

FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN

VOLTAGE vs TEMPERATURE

FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE

FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT. REFER TO HARRIS

APPLICATION NOTES AN7254 AND AN7260

Typical Performance Curves (Continued)

2.0

1.5

1.0

0.5

0.0

-80

-40

0

40

80

120

160

200

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250

µs, V

GS = 10V, ID = 70A

2.0

1.6

1.2

0.8

0.0

-80

-40

0

40

80

120

160

200

TJ, JUNCTION TEMPERATURE (

oC)

0.4

VGS = VDS,ID = 250µA

ID = 250µA

2.0

1.6

1.2

0.4

0.0

-80

-40

0

40

80

120

160

200

TJ, JUNCTION TEMPERATURE (

oC)

0.8

0

5

10

15

20

25

1000

2000

3000

5000

6000

7000

4000

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

VGS = 0V, FREQUENCY (f) = 1MHz

CISS

COSS

CRSS

10-5

t, RECTANGULAR PULSE DURATION (s)

10-4

10-3

10-2

10-1

10-0

101

10-2

10-1

100

101

NOTES:

1. DUTY FACTOR, D = t1/t2

2. PEAK TJ = PDM x (ZθJC) +TC

SINGLE PULSE

0.2

0.1

0.05

0.02

0.5

PDM

t1

t2

0.01

30.0

22.5

15.0

7.5

0.0

10.0

7.5

5.0

2.5

0.0

t, TIME (

µs)

20

I

G

REF

()

I

G

ACT

()

----------------------

80

I

G

REF

()

I

G

ACT

()

----------------------

VDD = BVDSS

0.75BVDSS

0.50BVDSS

0.25BVDSS

0.75BVDSS

0.50BVDSS

0.25BVDSS

RL = 0.43Ω

IG(REF) = 3.0mA

VGS = 10V

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