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RF1S70N06 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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RF1S70N06 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright © Harris Corporation 1995 3-51 SEMICONDUCT OR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 JEDEC TO-220AB JEDEC TO-262AA JEDEC TO-263AB DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE DRAIN GATE DRAIN (FLANGE) A M DRAIN (FLANGE) GATE SOURCE Features • 70A, 60V •rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in appli- cations such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49007. Symbol PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG70N06 TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06 TO-262AA F1S70N06 RF1S70N06SM TO-263AB F1S70N06 NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. G D S Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM UNITS Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 70 Refer to Peak Current Curve A Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation TC = +25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 1.0 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ -55 to +175 oC December 1995 File Number 3206.3 |
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Similar Description - RF1S70N06 |
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