CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.

Copyright

3-51

SEMICONDUCT OR

RFG70N06, RFP70N06,

RF1S70N06, RF1S70N06SM

70A, 60V, Avalanche Rated, N-Channel

Enhancement-Mode Power MOSFETs

Packages

JEDEC STYLE TO-247

JEDEC TO-220AB

JEDEC TO-262AA

JEDEC TO-263AB

DRAIN

(BOTTOM

SIDE METAL)

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

A

M

DRAIN

(FLANGE)

GATE

SOURCE

Features

• 70A, 60V

•

Temperature Compensated PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

Description

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM

are N-channel power MOSFETs manufactured using the MegaFET

process. This process, which uses feature sizes approaching

those of LSI circuits, gives optimum utilization of silicon, resulting

in outstanding performance. They were designed for use in appli-

cations such as switching regulators, switching converters, motor

drivers and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49007.

Symbol

PACKAGE AVAILABILITY

PART NUMBER

PACKAGE

BRAND

RFG70N06

TO-247

RFG70N06

RFP70N06

TO-220AB

RFP70N06

RF1S70N06

TO-262AA

F1S70N06

RF1S70N06SM

TO-263AB

F1S70N06

NOTE: When ordering use the entire part number. Add the suffix, 9A, to

obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.

G

D

S

RFG70N06, RFP70N06

RF1S70N06, RF1S70N06SM

UNITS

60

V

60

V

±20

V

Drain Current

70

Refer to Peak Current Curve

A

Refer to UIS Curve

Power Dissipation

D

150

1.0

W

-55 to +175

December 1995

File Number

3206.3