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RFG60P06E Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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RFG60P06E Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2002 Fairchild Semiconductor Corporation RFG60P06E Rev. B RFG60P06E 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA09836. Features • 60A, 60V •rDS(ON) = 0.030Ω • Temperature Compensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature Symbol Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER PACKAGE BRAND RFG60P06E TO-247 RFG60P06E NOTE: When ordering use the entire part numberr RFG60P06E. D G S DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE Data Sheet January 2002 |
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