1

Motorola TMOS Power MOSFET Transistor Device Data

Advance Information

HDTMOS E-FET™

High Density Power FET

DPAK for Surface Mount or

Insertion Mount

N–Channel Enhancement–Mode Silicon Gate

This advanced high–cell density HDTMOS E–FET is designed to

withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain–to–source

diode with a fast recovery time. Designed for low–voltage,

high–speed switching applications in power supplies, converters

and PWM motor controls, these devices are particularly well suited

for bridge circuits, and inductive loads. The avalanche energy

capability is specified to eliminate the guesswork in designs where

inductive loads are switched, and to offer additional safety margin

against unexpected voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

• Surface Mount Package Available in 16 mm, 13–inch/2500

Unit Tape & Reel, Add T4 Suffix to Part Number

• Available in Insertion Mount, Add –1 or 1 to Part Number

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

60

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Gate–Source Voltage — Continuous

VGS

VGSM

± 15

± 20

Vdc

Vpk

Drain Current — Continuous @ 25

°C

°C

ID

ID

IDM

20

12

60

Adc

Apk

Total Power Dissipation

Derate above 25

°C

Total Power Dissipation @ TC = 25°C (1)

PD

40

0.32

1.75

Watts

W/

°C

Watts

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 20 Apk, L = 1.0 mH, RG = 25 Ω)

EAS

200

mJ

Thermal Resistance — Junction to Case

R

θJC

R

θJA

R

θJA

3.13

100

71.4

°C/W

Maximum Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

(1) When surface mounted to an FR–4 board using the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Order this document

bt MTD20N06HDL/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

D

S

G

MTD20N06HDL

TMOS POWER FET

LOGIC LEVEL

20 AMPERES

60 VOLTS

RDS(on) = 0.045 OHM

Motorola Preferred Device

™

CASE 369A–13, Style 2

DPAK