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NCP699SN13T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP699SN13T1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page NCP699 http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Venable = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TA = 25°C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Output Voltage (Iout = 10 mA, TA = −40°C to 85°C) 1.3 V 1.4 V 1.5 V 1.8 V 2.5 V 2.8 V 2.9 V 3.0 V 3.1 V 3.3 V 3.4 V 4.5 V 5.0 V Vout 1.261 1.358 1.455 1.746 2.425 2.716 2.813 2.910 3.007 3.201 3.298 4.365 4.850 1.3 1.4 1.5 1.8 2.5 2.8 2.9 3.0 3.1 3.3 3.4 4.5 5.0 1.339 1.442 1.545 1.854 2.575 2.884 2.987 3.090 3.193 3.399 3.502 4.635 5.150 V Line Regulation (Iout = 10 mA) 1.3 V−4.4 V (Vin = Vout(nom.) + 1.0 V to 6.0 V) 4.5 V−5.0 V (Vin = 5.5 V to 6.0 V) Regline − − 1.0 1.0 3.0 3.0 mV/V Load Regulation (Iout = 1.0 mA to 150 mA) Regload − 0.3 0.8 mV/mA Output Current Limit 1.3 V−3.9 V (Vin = Vout(nom.) + 2.0 V) 4.0 V−5.0 V (Vin = 6.0 V) Io(nom.) 150 150 240 240 − − mA Dropout Voltage (Iout = 150 mA, Measured at Vout = Vout(nom) −3.0%) 1.3 V 1.4 V 1.5 V 1.8 V 2.5 V 2.8 V 2.9 V 3.0 V 3.1 V 3.3 V 3.4 V 4.5 V − 5.0 V Vin−Vout − − − − − − − − − − − − 800 750 690 570 400 360 350 340 330 320 300 240 900 850 750 620 450 420 420 400 400 360 360 300 mV Disable Current (TA = −40°C to 85°C) (Enable Input = 0 V) DIS − 0.03 1.0 mA Ground Current (TA = −40°C to 85°C) (Enable Input = Vin, Iout = 1.0 mA to Io(nom.)) IGND − 40 90 mA Output Short Circuit Current (Vout = 0 V) 1.3 V−3.9 V (Vin = Vout(nom.) + 2.0 V) 4.0 V−5.0 V (Vin = 6.0 V) Iout(max) 150 150 300 300 600 600 mA Output Voltage Noise (f = 100 Hz to 100 kHz) Iout = 30 mA, Cout = 1 mF Vn − 100 − mVrms Ripple Rejection (f = 120 Hz, 15 mA) (f = 1.0 kHz, 15 mA) RR − − 55 50 − − dB Enable Input Threshold Voltage (TA = −40°C to 85°C) (Voltage Increasing, Output Turns On, Logic High) (Voltage Decreasing, Output Turns Off, Logic Low) Vth(en) 0.95 − − − − 0.3 V Output Voltage Temperature Coefficient TC − "100 − ppm/°C 3. Maximum package power dissipation limits must be observed. PD + TJ(max) *TA RqJA 4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. |
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