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BF966SA Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. BF966SA
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF966SA Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number 85004
Rev. 1.5, 15-Apr-05
BF966S
Vishay Semiconductors
Figure 9. Forward Transadmittance vs. Drain Current
Figure 10. Short Circuit Input Admittance
Figure 11. Short Circuit Reverse Transfer Admittance
0
2
4
6
8
10
12
14
16
18
20
22
24
0
5
10
15
20
25
30
ID – Drain Current ( mA )
12769
VDS =15V
f=1MHz
VG2S =4V
2V
3V
1V
0.5 V
0V
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20
Re (y11)( mS )
12770
VDS =15V
VG2S =4V
f = 100...1300 MHz
f = 1300 MHz
700 MHz
400 MHz
1000 MHz
100 MHz
ID =5mA
ID =10mA
ID =20mA
–0.1
0.0
0.1
0.2
0.3
0.0
0.1
0.2
0.3
0.4
0.5
Re (y12)( mS )
12772
VDS =15V
VG2S =4V
f = 100...1300 MHz
f = 1300 MHz
700 MHz
ID =5mA
10 mA
20 mA
1000 MHz
Figure 12. Short Circuit Forward Transfer Admittance
Figure 13. Short Circuit Output Admittance
–40
–35
–30
–25
–20
–15
–10
–5
0
5
–8
–4
0
4
8
12
16
20
24
Re (y21)( mS )
12771
VDS =15V
VG2S =4V
f = 100...1300 MHz
f = 100 MHz
1300 MHz
1000 MHz
400 MHz
700 MHz
ID =5mA
10 mA
20 mA
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
Re (y22)( mS )
12773
VDS =15V
VG2S =4V
f =1 00...1300 MHz
f = 1300 MHz
1000 MHz
400 MHz
100 MHz
ID=5mA
20 mA
700 MHz
ID =10mA


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