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BF966SA Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. BF966SA
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF966SA Datasheet(HTML) 3 Page - Vishay Siliconix

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BF966S
Document Number 85004
Rev. 1.5, 15-Apr-05
Vishay Semiconductors
www.vishay.com
3
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 4. Drain Current vs. Gate 2 Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Drain Current
0
10
20
30
40
50
60
70
80
90
100
–1
012345
VG1S – Gate 1 Source Voltage(V)
12763
V G2S =6 V
5V
4V
0V
2V
1V
3V
VDS =15 V
–1 V
0
10
20
30
40
50
60
70
80
–1
012345
VG2S – Gate 2 Source Voltage(V)
12764
0V
2V
1V
3V
VDS =15 V
–1 V
VG1S =4 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
3
6
9
1215 1821 2427 30
ID – Drain Current ( mA )
12765
VDS =15V
VG2S =4V
f=1MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
2
4
6
8
10 12 14 16 18 20
VDS – Drain Source Voltage(V)
12766
VG2S =4V
ID =10mA
f=1MHz
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
–3
–2
–1
01
23
456
VG2S – Gate 2 Source Voltage(V)
12767
VDS =15V
VG1S =0
f=1MHz
–70
–60
–50
–40
–30
–20
–10
0
10
–5
–4
–3
–2
–1
0123
VG1S – Gate 1 Source Voltage(V)
12768
4V
0V
2V
1V
3V
f = 200 MHz
–0.5 V
VG2S = –2...–3 V
–1 V


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