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BF966SA Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. BF966SA
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF966SA Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85004
Rev. 1.5, 15-Apr-05
BF966S
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown
voltage
ID = 10 µA, - VG1S = - VG2S = 4 V
V(BR)DS
20
V
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR)G1SS
814
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
814
V
Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
50
nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
50
nA
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V BF966S
IDSS
418
mA
BF966SA
IDSS
410.5
mA
BF966SB
IDSS
9.5
18
mA
Gate 1 - source cut-off voltage
VDS = 15 V, VG2S = 4 V,
ID = 20 µA
-VG1S(OFF)
2.5
V
Gate 2 - source cut-off voltage
VDS = 15 V, VG1S = 0, ID = 20 µA-VG2S(OFF)
2.0
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
| y21s |
15
18.5
mS
Gate 1 input capacitance
Cissg1
2.2
2.6
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Cissg2
1.1
pF
Feedback capacitance
Crss
25
35
fF
Output capacitance
Coss
0.8
1.2
pF
Power gain
GS = 2 mS, GL = 0.5 mS,
f = 200 MHz
Gps
25
dB
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
Gps
18
dB
AGC range
VG2S = 4 to -2 V, f = 800 MHz
∆G
ps
40
dB
Noise figure
GS = 2 mS, GL = 0.5 mS,
f = 200 MHz
F1.0
dB
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
F1.8
dB
Figure 1. Total Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
96 12159
Tamb - Ambient Temperature ( °C)
Figure 2. Drain Current vs. Drain Source Voltage
0
4
8
12
16
20
24
28
32
36
02468
10
12
14
16
VDS – Drain Source Voltage(V)
12762
VG1S =2 V
1.5 V
1V
0V
–0.5 V
–1 V
0.5 V
VG2S =4 V


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